Samsung officially announced that it has begun mass production of 7nm LPP (Low Power Plus) process chips.
It is reported that Samsung’s 7nm LPP uses EUV lithography, the machine is sourced from the Netherlands ASML (Asma), the model is double workpiece table NXE: 3400B (light source power 280W), daily production capacity of 1500 pieces.
Briefly, EUV exposes silicon wafers using extreme ultraviolet light at a wavelength of 13.5 nm, whereas conventional argon fluoride (ArF) immersion lithography relies on 193 nm wavelengths and requires expensive multimode masking devices. EUV technology makes it possible to create a silicon wafer layer with a single mask, while ArF may require up to 4 times the mask to create the same wafer. In other words, Samsung’s 7 LPP process can reduce the total number of masks by about 20% compared to non-EUV processes, saving customers time and money.
Samsung revealed that it has been working on EUV technology since around 2000.
In terms of technical specifications, compared to 10nm FinFET, Samsung 7nm LPP can achieve 40% increase in area energy efficiency (the same complexity is dimension), 20% performance increase, and power consumption reduction up to 50%.
Samsung revealed that the successful mass production of 7nm LPP based on EUV laid the foundation for the advancement of 3nm and pointed out the road. In terms of production capacity, the S3 plant in Hwaseong, South Korea will open a new production line by 2020.
It is known that Qualcomm‘s new 5G baseband will adopt Samsung’s 7nm LPP process, and it seems that SoC 8150/8180 and other SoCs are also very big.