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Samsung and Hynix develop DRAM chips for EUV technology

Unlike TSMCs pre-emptive layout at the 7nm node, Samsung is slower at the 7nm node. Last week, it announced the official mass production of the 7nm EUV process. One reason is that Samsung directly went to the EUV lithography process at the 7nm node. Using the transition process, this is much more radical than Intel and TSMC. In addition to the logic process upgrade to the EUV process, Samsung is also studying the EUV process in the future 1Ynm process DRAM memory chip production, and they are not the only one, SK Hynix is ​​also exposed to the development of EUV process DRAM chips, only Micron in this regard More conservative.
Whether it is a processor chip or a memory chip, the current semiconductor production is almost inseparable from the lithography machine. The EUV lithography process is mainly based on the demand and cost. The logic chip process is the most demanding for the EUV process. It is recognized that a large number of nodes using the EUV process, the more they go down, the more they rely on the EUV process.
DRAM memory is not urgent for the EUV process. After all, the most advanced DRAM process is still above 18nm, so it is not necessary to use the EUV process even if it is at the and process nodes.
Micron does not need to represent other DRAM manufacturers. Samsung is the most radical in the EUV process. It was previously tried at the 1Ynm node to try EUV lithography, and the fastest 1Ynm memory chip for EUV production in 2020.
In addition to Samsung, SK Hynix has built a new DRAM factory in Icheon, South Korea, and is also developing DRAM memory chips for EUV technology.
The advantage of using the EUV process is that it can improve the lithography precision, reduce the line width, and reduce the memory unit capacity cost. However, the EUV process is not mature enough at present, and the production capacity is not as good as the ordinary lithography machine, which requires time to improve.